8/15/2023 0 Comments Circuit coder tri state![]() As is well known to those having skill in the art, a tri-state buffer is an inverting or non-inverting buffer that may be placed in a high impedance state, so as to effectively disconnect its input from its output, in response to a control signal. A tri-state buffer is configured to receive an output of the sense amplifier circuit. Memory devices, such as NOR-type flash memory devices, according to some embodiments of the invention, include a sense amplifier circuit that is configured to sense and amplify a current of a memory cell. Furthermore, the data line discharging circuit may also need a control signal for controlling the data line discharging circuit whenever a read operation starts. The data line discharging circuit for discharging the data line may occupy a large area. When a control signal is applied to the data line discharging circuit, at least some residual charge of the data line may be removed. The data line discharging circuit may include an NMOS transistor connected between a data line and ground. Moreover, a conventional NOR-type flash memory device may also include a data line discharging circuit for removing at least some charge stored in a data line before beginning a read operation. When a bitline discharging signal is applied to the bitline discharging circuit, at least some residual charge of the bitline may be removed. The bitline discharging circuit may include an NMOS transistor connected between a bitline and ground. A conventional NOR-type flash memory device includes a bitline discharging circuit so as to remove at least some charge stored in a bitline before beginning a read operation. The NOR-type flash memory device generally removes charges generated in a previous sensing operation before reading data stored in memory cells. In contrast, NOR-type flash memory devices may be capable of high processing speeds, so that they are widely used in cellular phones and other devices, where high processing speeds may be desired. The NAND-type flash memory devices have been used for USB storage devices, MP3 Players and so on. ![]() ![]() Because the NAND-type flash memory has a simple structure, it may provide relatively high memory capacity and relatively low cost as compared with the NOR-type flash memory. One is a NAND-type flash memory device and the other is a NOR-type flash memory device. In addition, these non-volatile memory devices may be classified into two groups according to a structure of a memory cell array. These non-volatile memory devices may be used in mobile devices such as digital cameras, cellular phones, PDAs and so forth because they can have low power dissipation. The category of non-volatile memory devices includes PROM (Programmable ROM), EPROM (Erasable PROM), EEPROM (Electrically EPROM), and Flash Memory devices. Non-volatile memory devices retain their stored data even when their power supplies are interrupted. Integrated circuit memory devices are widely used in many consumer, commercial and other applications. This invention relates to memory devices and operating methods, and more particularly to data line discharging circuits and methods for memory devices. 3, 2004, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. ยง119 of Korean Patent Application 2004-0088986 filed on Nov. This application claims the benefit under 35 U.S.C.
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